Product Summary
The MBRS2H100T3G is a Schottky Power Rectifier. It employs the Schottky Barrier principle in a metal-to-silicon power rectifier.
Parametrics
Absolute maximum ratings: (1)Peak Repetitive Reverse Voltage:100V; (2)Working Peak Reverse Voltage:100V; (3)DC Blocking Voltage:100V; (4)Average Rectified Forward Current(TL=150℃):2.0A; (5)Non-Repetitive Peak Surge Current:130A; (6)Storage Temperature Range:-65℃ to +175℃; (7)Operating Junction Temperature:-65℃ to +175℃.
Features
Features: (1)Compact Package with J-Bend Leads Ideal for Automated Handling; (2)Highly Stable Oxide Passivated Junction; (3)Guard-Ring for Overvoltage Protection; (4)Low Forward Voltage Drop; (5)This is a Pb-Free Device.
Diagrams
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![]() MBRS2H100T3G |
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![]() Schottky (Diodes & Rectifiers) SCHOTTKY 2A 100V |
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![]() MBRS10100 |
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![]() Schottky (Diodes & Rectifiers) 10 Amp 100 Volt Single |
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![]() MBRS10100CT |
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![]() Schottky (Diodes & Rectifiers) 10 Amp 100 Volt Dual |
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![]() MBRS1035 |
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![]() Schottky (Diodes & Rectifiers) 10 Amp 35 Volt Single |
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![]() MBRS1035CT |
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![]() Schottky (Diodes & Rectifiers) 10 Amp 35 Volt Dual |
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![]() MBRS1045 |
![]() Taiwan Semiconductor |
![]() Schottky (Diodes & Rectifiers) 10 Amp 45 Volt Single |
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![]() MBRS1045CT |
![]() Taiwan Semiconductor |
![]() Schottky (Diodes & Rectifiers) 10 Amp 45 Volt Dual |
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